A2TBH45M65W3-FC STMicroelectronics
Виробник: STMicroelectronics
MOSFET Modules ACEPACK 2 power module triple boost 650V 49 mOhm half-bridge 23.5mOhm SiC MOSFET
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Технічний опис A2TBH45M65W3-FC STMicroelectronics
Description: ACEPACK 2 POWER MODULE, TRIPLE B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 5 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 28A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 400V, Rds On (Max) @ Id, Vgs: 35mOhm @ 30A, 18V, Gate Charge (Qg) (Max) @ Vgs: 79nC @ 18V, Vgs(th) (Max) @ Id: 4.2V @ 10mA.
Інші пропозиції A2TBH45M65W3-FC за ціною від 4028.11 грн до 5303.47 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
| A2TBH45M65W3-FC | STMicroelectronics |
Description: ACEPACK 2 POWER MODULE, TRIPLE B Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 5 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 28A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 400V Rds On (Max) @ Id, Vgs: 35mOhm @ 30A, 18V Gate Charge (Qg) (Max) @ Vgs: 79nC @ 18V Vgs(th) (Max) @ Id: 4.2V @ 10mA |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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| A2TBH45M65W3-FC |
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Виробник: STMicroelectronics
Description: ACEPACK 2 POWER MODULE, TRIPLE B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 5 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 400V
Rds On (Max) @ Id, Vgs: 35mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 79nC @ 18V
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Description: ACEPACK 2 POWER MODULE, TRIPLE B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 5 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 400V
Rds On (Max) @ Id, Vgs: 35mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 79nC @ 18V
Vgs(th) (Max) @ Id: 4.2V @ 10mA
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5303.47 грн |
| 18+ | 4028.11 грн |