Технічний опис A3T18H455W23SR6 NXP Semiconductors
Description: RF MOSFET LDMOS 30V ACP1230S-4, Packaging: Tape & Reel (TR), Package / Case: ACP-1230S-4L2S, Current Rating (Amps): 10µA, Mounting Type: Chassis Mount, Frequency: 1.805GHz ~ 1.88GHz, Configuration: Dual, Power - Output: 192W, Gain: 16.7dB, Technology: LDMOS, Supplier Device Package: ACP-1230S-4L2S, Voltage - Rated: 65 V, Voltage - Test: 30 V, Current - Test: 600 mA.
Інші пропозиції A3T18H455W23SR6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| A3T18H455W23SR6 | Виробник : NXP USA Inc. |
 Description: RF MOSFET LDMOS 30V ACP1230S-4Packaging: Tape & Reel (TR) Package / Case: ACP-1230S-4L2S Current Rating (Amps): 10µA Mounting Type: Chassis Mount Frequency: 1.805GHz ~ 1.88GHz Configuration: Dual Power - Output: 192W Gain: 16.7dB Technology: LDMOS Supplier Device Package: ACP-1230S-4L2S Voltage - Rated: 65 V Voltage - Test: 30 V Current - Test: 600 mA |
товару немає в наявності |
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A3T18H455W23SR6 | Виробник : NXP Semiconductors |
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V |
товару немає в наявності |