ADP360120W3 STMicroelectronics
Виробник: STMicroelectronics
MOSFET Modules Automotive-grade ACEPACK DRIVE power module sixpack 1200V 2.55mOhm SiC MOSFET
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Технічний опис ADP360120W3 STMicroelectronics
Description: MOSFET 6N-CH 1200V 379A ACEPACK, Part Status: Active, Supplier Device Package: ACEPACK, Vgs(th) (Max) @ Id: 4.4V @ 40mA, Gate Charge (Qg) (Max) @ Vgs: 944nC @ 18V, Rds On (Max) @ Id, Vgs: 3.45mOhm @ 360A, 18V, Input Capacitance (Ciss) (Max) @ Vds: 28070pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 379A (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 704W (Tj), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 6 N-Channel, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Інші пропозиції ADP360120W3 за ціною від 215369.29 грн до 215369.29 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
| ADP360120W3 | STMicroelectronics |
Description: MOSFET 6N-CH 1200V 379A ACEPACK Part Status: Active Supplier Device Package: ACEPACK Vgs(th) (Max) @ Id: 4.4V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 944nC @ 18V Rds On (Max) @ Id, Vgs: 3.45mOhm @ 360A, 18V Input Capacitance (Ciss) (Max) @ Vds: 28070pF @ 800V Current - Continuous Drain (Id) @ 25°C: 379A (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 704W (Tj) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 6 N-Channel Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
|
| ADP360120W3 |
Виробник: STMicroelectronics
Description: MOSFET 6N-CH 1200V 379A ACEPACK
Part Status: Active
Supplier Device Package: ACEPACK
Vgs(th) (Max) @ Id: 4.4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 944nC @ 18V
Rds On (Max) @ Id, Vgs: 3.45mOhm @ 360A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 28070pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 379A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 704W (Tj)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 6N-CH 1200V 379A ACEPACK
Part Status: Active
Supplier Device Package: ACEPACK
Vgs(th) (Max) @ Id: 4.4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 944nC @ 18V
Rds On (Max) @ Id, Vgs: 3.45mOhm @ 360A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 28070pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 379A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 704W (Tj)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 215369.29 грн |