AFGBP40T120SWD ONSEMI
Виробник: ONSEMI
Description: ONSEMI - AFGBP40T120SWD - IGBT, 80 A, 1.33 V, 681 W, 1.2 kV, BPAK, 7 Pin(s)
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: TBA
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
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Технічний опис AFGBP40T120SWD ONSEMI
Description: FS7 1200V 40A NSCR IGBT BPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 330 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A, Supplier Device Package: T2PAK, IGBT Type: Trench Field Stop, Test Condition: 800V, 40A, 10Ohm, 15V, Gate Charge: 155 nC, Grade: Automotive, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 681 W, Qualification: AEC-Q101, Td (on/off) @ 25°C: 48ns/258ns, Switching Energy: 5.34mJ (on), 3mJ (off).
Інші пропозиції AFGBP40T120SWD за ціною від 263.60 грн до 582.19 грн
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AFGBP40T120SWD | onsemi |
Description: FS7 1200V 40A NSCR IGBT BPAK Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 330 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A Supplier Device Package: T2PAK IGBT Type: Trench Field Stop Test Condition: 800V, 40A, 10Ohm, 15V Gate Charge: 155 nC Grade: Automotive Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 681 W Qualification: AEC-Q101 Td (on/off) @ 25°C: 48ns/258ns Switching Energy: 5.34mJ (on), 3mJ (off) |
на замовлення 790 шт: термін постачання 21-31 дні (днів) |
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AFGBP40T120SWD | ONSEMI |
Description: ONSEMI - AFGBP40T120SWD - IGBT, 80 A, 1.33 V, 681 W, 1.2 kV, BPAK, 7 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: TBA hazardous: false rohsPhthalatesCompliant: TBA isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.33V usEccn: EAR99 euEccn: NLR Verlustleistung: 681W Bauform - Transistor: BPAK Dauerkollektorstrom: 80A Anzahl der Pins: 7Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: No SVHC (25-Jun-2025) |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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| AFGBP40T120SWD |
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Виробник: onsemi
Description: FS7 1200V 40A NSCR IGBT BPAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 330 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Supplier Device Package: T2PAK
IGBT Type: Trench Field Stop
Test Condition: 800V, 40A, 10Ohm, 15V
Gate Charge: 155 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 681 W
Qualification: AEC-Q101
Td (on/off) @ 25°C: 48ns/258ns
Switching Energy: 5.34mJ (on), 3mJ (off)
Description: FS7 1200V 40A NSCR IGBT BPAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 330 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Supplier Device Package: T2PAK
IGBT Type: Trench Field Stop
Test Condition: 800V, 40A, 10Ohm, 15V
Gate Charge: 155 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 681 W
Qualification: AEC-Q101
Td (on/off) @ 25°C: 48ns/258ns
Switching Energy: 5.34mJ (on), 3mJ (off)
на замовлення 790 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 577.25 грн |
| 10+ | 378.12 грн |
| 100+ | 279.25 грн |
| AFGBP40T120SWD |
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Виробник: ONSEMI
Description: ONSEMI - AFGBP40T120SWD - IGBT, 80 A, 1.33 V, 681 W, 1.2 kV, BPAK, 7 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: TBA
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.33V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 681W
Bauform - Transistor: BPAK
Dauerkollektorstrom: 80A
Anzahl der Pins: 7Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - AFGBP40T120SWD - IGBT, 80 A, 1.33 V, 681 W, 1.2 kV, BPAK, 7 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: TBA
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.33V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 681W
Bauform - Transistor: BPAK
Dauerkollektorstrom: 80A
Anzahl der Pins: 7Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 582.19 грн |
| 5+ | 492.56 грн |
| 10+ | 402.93 грн |
| 50+ | 344.37 грн |
| 100+ | 291.09 грн |
| 250+ | 263.60 грн |