Технічний опис AFT05MS006NT1 NXP
Description: NXP - AFT05MS006NT1 - HF-FET-Transistor, 30 VDC, 128 W, 136 MHz, 941 MHz, PLD-1.5W, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30VDC, rohsCompliant: YES, Dauer-Drainstrom Id: -, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, MSL: MSL 3 - 168 Stunden, usEccn: EAR99, Betriebsfrequenz, max.: 941MHz, Betriebsfrequenz, min.: 136MHz, euEccn: NLR, Verlustleistung: 128W, Bauform - Transistor: PLD-1.5W, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (27-Jun-2024).
Інші пропозиції AFT05MS006NT1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AFT05MS006NT1 | NXP USA Inc. |
 Description: RF MOSFET LDMOS 7.5V PLD-1.5WPackaging: Tape & Reel (TR) Package / Case: PLD-1.5W Mounting Type: Surface Mount Frequency: 520MHz Power - Output: 6W Gain: 18.3dB Technology: LDMOS Supplier Device Package: PLD-1.5W Part Status: Not For New Designs Voltage - Rated: 30 V Voltage - Test: 7.5 V Current - Test: 100 mA |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
AFT05MS006NT1 | NXP USA Inc. |
Description: RF MOSFET LDMOS 7.5V PLD-1.5W Packaging: Cut Tape (CT) Package / Case: PLD-1.5W Mounting Type: Surface Mount Frequency: 520MHz Power - Output: 6W Gain: 18.3dB Technology: LDMOS Supplier Device Package: PLD-1.5W Part Status: Not For New Designs Voltage - Rated: 30 V Voltage - Test: 7.5 V Current - Test: 100 mA |
товару немає в наявності |
В кошику од. на суму грн. |
| AFT05MS006NT1 | NXP Semiconductors |
RF MOSFET Transistors The factory is currently not accepting orders for this product. |
товару немає в наявності |
В кошику од. на суму грн. | |
| AFT05MS006NT1 | NXP |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 125W; PLD-1.5W; Pout: 6W; 18.3dB Type of transistor: N-MOSFET Polarisation: unipolar Kind of transistor: RF Power dissipation: 125W Case: PLD-1.5W Mounting: SMD Kind of package: reel; tape Frequency: 520MHz Kind of channel: enhancement Output power: 6W Open-loop gain: 18.3dB Efficiency: 73% |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
AFT05MS006NT1 | NXP |
Description: NXP - AFT05MS006NT1 - HF-FET-Transistor, 30 VDC, 128 W, 136 MHz, 941 MHz, PLD-1.5W tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30VDC rohsCompliant: YES Dauer-Drainstrom Id: - hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y MSL: MSL 3 - 168 Stunden usEccn: EAR99 Betriebsfrequenz, max.: 941MHz Betriebsfrequenz, min.: 136MHz euEccn: NLR Verlustleistung: 128W Bauform - Transistor: PLD-1.5W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
AFT05MS006NT1 | NXP |
Description: NXP - AFT05MS006NT1 - HF-FET-Transistor, 30 VDC, 128 W, 136 MHz, 941 MHz, PLD-1.5W tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30VDC rohsCompliant: YES Dauer-Drainstrom Id: - hazardous: false rohsPhthalatesCompliant: YES isCanonical: N MSL: MSL 3 - 168 Stunden usEccn: EAR99 Betriebsfrequenz, max.: 941MHz Betriebsfrequenz, min.: 136MHz euEccn: NLR Verlustleistung: 128W Bauform - Transistor: PLD-1.5W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
 |
AFT05MS006NT1 | NXP Semiconductors |
Trans RF MOSFET N-CH 30V 3-Pin PLD-1.5W T/R |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| AFT05MS006NT1 |
|
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 7.5V PLD-1.5W
Packaging: Tape & Reel (TR)
Package / Case: PLD-1.5W
Mounting Type: Surface Mount
Frequency: 520MHz
Power - Output: 6W
Gain: 18.3dB
Technology: LDMOS
Supplier Device Package: PLD-1.5W
Part Status: Not For New Designs
Voltage - Rated: 30 V
Voltage - Test: 7.5 V
Current - Test: 100 mA
Description: RF MOSFET LDMOS 7.5V PLD-1.5W
Packaging: Tape & Reel (TR)
Package / Case: PLD-1.5W
Mounting Type: Surface Mount
Frequency: 520MHz
Power - Output: 6W
Gain: 18.3dB
Technology: LDMOS
Supplier Device Package: PLD-1.5W
Part Status: Not For New Designs
Voltage - Rated: 30 V
Voltage - Test: 7.5 V
Current - Test: 100 mA
товару немає в наявності
В кошику
од. на суму грн.
| AFT05MS006NT1 |
|
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 7.5V PLD-1.5W
Packaging: Cut Tape (CT)
Package / Case: PLD-1.5W
Mounting Type: Surface Mount
Frequency: 520MHz
Power - Output: 6W
Gain: 18.3dB
Technology: LDMOS
Supplier Device Package: PLD-1.5W
Part Status: Not For New Designs
Voltage - Rated: 30 V
Voltage - Test: 7.5 V
Current - Test: 100 mA
Description: RF MOSFET LDMOS 7.5V PLD-1.5W
Packaging: Cut Tape (CT)
Package / Case: PLD-1.5W
Mounting Type: Surface Mount
Frequency: 520MHz
Power - Output: 6W
Gain: 18.3dB
Technology: LDMOS
Supplier Device Package: PLD-1.5W
Part Status: Not For New Designs
Voltage - Rated: 30 V
Voltage - Test: 7.5 V
Current - Test: 100 mA
товару немає в наявності
В кошику
од. на суму грн.
| AFT05MS006NT1 |
|
Виробник: NXP Semiconductors
RF MOSFET Transistors The factory is currently not accepting orders for this product.
RF MOSFET Transistors The factory is currently not accepting orders for this product.
товару немає в наявності
В кошику
од. на суму грн.
| AFT05MS006NT1 |
|
Виробник: NXP
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 125W; PLD-1.5W; Pout: 6W; 18.3dB
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of transistor: RF
Power dissipation: 125W
Case: PLD-1.5W
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
Kind of channel: enhancement
Output power: 6W
Open-loop gain: 18.3dB
Efficiency: 73%
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 125W; PLD-1.5W; Pout: 6W; 18.3dB
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of transistor: RF
Power dissipation: 125W
Case: PLD-1.5W
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
Kind of channel: enhancement
Output power: 6W
Open-loop gain: 18.3dB
Efficiency: 73%
товару немає в наявності
В кошику
од. на суму грн.
| AFT05MS006NT1 |
|
Виробник: NXP
Description: NXP - AFT05MS006NT1 - HF-FET-Transistor, 30 VDC, 128 W, 136 MHz, 941 MHz, PLD-1.5W
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30VDC
rohsCompliant: YES
Dauer-Drainstrom Id: -
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Betriebsfrequenz, max.: 941MHz
Betriebsfrequenz, min.: 136MHz
euEccn: NLR
Verlustleistung: 128W
Bauform - Transistor: PLD-1.5W
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (27-Jun-2024)
Description: NXP - AFT05MS006NT1 - HF-FET-Transistor, 30 VDC, 128 W, 136 MHz, 941 MHz, PLD-1.5W
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30VDC
rohsCompliant: YES
Dauer-Drainstrom Id: -
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Betriebsfrequenz, max.: 941MHz
Betriebsfrequenz, min.: 136MHz
euEccn: NLR
Verlustleistung: 128W
Bauform - Transistor: PLD-1.5W
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (27-Jun-2024)
товару немає в наявності
В кошику
од. на суму грн.
| AFT05MS006NT1 |
|
Виробник: NXP
Description: NXP - AFT05MS006NT1 - HF-FET-Transistor, 30 VDC, 128 W, 136 MHz, 941 MHz, PLD-1.5W
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30VDC
rohsCompliant: YES
Dauer-Drainstrom Id: -
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Betriebsfrequenz, max.: 941MHz
Betriebsfrequenz, min.: 136MHz
euEccn: NLR
Verlustleistung: 128W
Bauform - Transistor: PLD-1.5W
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (27-Jun-2024)
Description: NXP - AFT05MS006NT1 - HF-FET-Transistor, 30 VDC, 128 W, 136 MHz, 941 MHz, PLD-1.5W
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30VDC
rohsCompliant: YES
Dauer-Drainstrom Id: -
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Betriebsfrequenz, max.: 941MHz
Betriebsfrequenz, min.: 136MHz
euEccn: NLR
Verlustleistung: 128W
Bauform - Transistor: PLD-1.5W
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (27-Jun-2024)
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| AFT05MS006NT1 |
|
Виробник: NXP Semiconductors
Trans RF MOSFET N-CH 30V 3-Pin PLD-1.5W T/R
Trans RF MOSFET N-CH 30V 3-Pin PLD-1.5W T/R
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.