Технічний опис AFT09MP055GNR1 NXP Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 625W; TO270WBG-4; Pout: 57W; SMT, Type of transistor: N-MOSFET, Polarisation: unipolar, Kind of transistor: RF, Power dissipation: 625W, Case: TO270WBG-4, Kind of package: reel; tape, Frequency: 870MHz, Kind of channel: enhancement, Output power: 57W, Electrical mounting: SMT, Open-loop gain: 17.5dB, Efficiency: 69%.
Інші пропозиції AFT09MP055GNR1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
AFT09MP055GNR1 | NXP USA Inc. |
Description: RF MOSFET LDMOS 12.5V TO270-4Current - Test: 550 mA Voltage - Test: 12.5 V Voltage - Rated: 40 V Part Status: Active Supplier Device Package: TO-270 WB-4 Gull Technology: LDMOS Gain: 15.7dB Power - Output: 1W Frequency: 870MHz Mounting Type: Surface Mount Package / Case: TO-270BB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| AFT09MP055GNR1 | NXP Semiconductors |
RF MOSFET Transistors MV9 55W 12.5V TO270WB4G |
товару немає в наявності |
В кошику од. на суму грн. | |
| AFT09MP055GNR1 | NXP |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; RF; 625W; TO270WBG-4; Pout: 57W; SMT Type of transistor: N-MOSFET Polarisation: unipolar Kind of transistor: RF Power dissipation: 625W Case: TO270WBG-4 Kind of package: reel; tape Frequency: 870MHz Kind of channel: enhancement Output power: 57W Electrical mounting: SMT Open-loop gain: 17.5dB Efficiency: 69% |
товару немає в наявності |
В кошику од. на суму грн. |
| AFT09MP055GNR1 |
![]() |
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 12.5V TO270-4
Current - Test: 550 mA
Voltage - Test: 12.5 V
Voltage - Rated: 40 V
Part Status: Active
Supplier Device Package: TO-270 WB-4 Gull
Technology: LDMOS
Gain: 15.7dB
Power - Output: 1W
Frequency: 870MHz
Mounting Type: Surface Mount
Package / Case: TO-270BB
Packaging: Tape & Reel (TR)
Description: RF MOSFET LDMOS 12.5V TO270-4
Current - Test: 550 mA
Voltage - Test: 12.5 V
Voltage - Rated: 40 V
Part Status: Active
Supplier Device Package: TO-270 WB-4 Gull
Technology: LDMOS
Gain: 15.7dB
Power - Output: 1W
Frequency: 870MHz
Mounting Type: Surface Mount
Package / Case: TO-270BB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| AFT09MP055GNR1 |
![]() |
Виробник: NXP Semiconductors
RF MOSFET Transistors MV9 55W 12.5V TO270WB4G
RF MOSFET Transistors MV9 55W 12.5V TO270WB4G
товару немає в наявності
В кошику
од. на суму грн.
| AFT09MP055GNR1 |
![]() |
Виробник: NXP
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 625W; TO270WBG-4; Pout: 57W; SMT
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of transistor: RF
Power dissipation: 625W
Case: TO270WBG-4
Kind of package: reel; tape
Frequency: 870MHz
Kind of channel: enhancement
Output power: 57W
Electrical mounting: SMT
Open-loop gain: 17.5dB
Efficiency: 69%
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 625W; TO270WBG-4; Pout: 57W; SMT
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of transistor: RF
Power dissipation: 625W
Case: TO270WBG-4
Kind of package: reel; tape
Frequency: 870MHz
Kind of channel: enhancement
Output power: 57W
Electrical mounting: SMT
Open-loop gain: 17.5dB
Efficiency: 69%
товару немає в наявності
В кошику
од. на суму грн.



