Продукція > NXP USA INC. > AFT21H350W03SR6
AFT21H350W03SR6

AFT21H350W03SR6 NXP USA Inc.



Виробник: NXP USA Inc.
Description: FET RF 2CH 65V 2.11GHZ NI1230S
Current - Test: 750 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: NI-1230S
Technology: LDMOS
Gain: 16.4dB
Power - Output: 63W
Frequency: 2.11GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230S
Packaging: Tape & Reel (TR)
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис AFT21H350W03SR6 NXP USA Inc.

Description: FET RF 2CH 65V 2.11GHZ NI1230S, Current - Test: 750 mA, Voltage - Test: 28 V, Voltage - Rated: 65 V, Part Status: Obsolete, Supplier Device Package: NI-1230S, Technology: LDMOS, Gain: 16.4dB, Power - Output: 63W, Frequency: 2.11GHz, Mounting Type: Chassis Mount, Package / Case: NI-1230S, Packaging: Tape & Reel (TR).

Інші пропозиції AFT21H350W03SR6

Фото Назва Виробник Інформація Доступність
Ціна
AFT21H350W03SR6 AFT21H350W03SR6 NXP USA Inc. Description: FET RF 2CH 65V 2.11GHZ NI1230S
Current - Test: 750 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: NI-1230S
Technology: LDMOS
Gain: 16.4dB
Power - Output: 63W
Frequency: 2.11GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230S
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
AFT21H350W03SR6
AFT21H350W03SR6
Виробник: NXP USA Inc.
Description: FET RF 2CH 65V 2.11GHZ NI1230S
Current - Test: 750 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: NI-1230S
Technology: LDMOS
Gain: 16.4dB
Power - Output: 63W
Frequency: 2.11GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230S
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.