AIDK08S65C5ATMA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 356.88 грн |
| 10+ | 217.23 грн |
| 100+ | 177.62 грн |
| 500+ | 172.68 грн |
| 1000+ | 155.06 грн |
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Технічний опис AIDK08S65C5ATMA1 Infineon Technologies
Description: DISCRETE DIODES, Supplier Device Package: PG-TO263-2, Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 248pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C.
Інші пропозиції AIDK08S65C5ATMA1 за ціною від 336.30 грн до 474.96 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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AIDK08S65C5ATMA1 | Infineon Technologies |
 Description: DISCRETE DIODESCurrent - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO263-2 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 248pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 197 шт: термін постачання 21-31 дні (днів) |
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| AIDK08S65C5ATMA1 |
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Виробник: Infineon Technologies
Description: DISCRETE DIODES
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO263-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 248pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DISCRETE DIODES
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO263-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 248pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 197 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 474.96 грн |
| 10+ | 410.41 грн |
| 100+ | 336.30 грн |