AIDK10S65C5ATMA1 INFINEON
Виробник: INFINEONDescription: INFINEON - AIDK10S65C5ATMA1 - SiC-Schottky-Diode, CoolSiC Gen V, Einfach, 650 V, 10 A, 15 nC, TO-263
tariffCode: 85411000
Kapazitive Gesamtladung: 15nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 10A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 650V
Anzahl der Pins: 2 Pins
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
на замовлення 212 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 133.72 грн |
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Технічний опис AIDK10S65C5ATMA1 INFINEON
Description: DISCRETE DIODES, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 303pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PG-TO263-2, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Qualification: AEC-Q101.
Інші пропозиції AIDK10S65C5ATMA1 за ціною від 133.72 грн до 195.01 грн
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AIDK10S65C5ATMA1 | Виробник : INFINEON |
Description: INFINEON - AIDK10S65C5ATMA1 - SiC-Schottky-Diode, CoolSiC Gen V, Einfach, 650 V, 10 A, 15 nC, TO-263 tariffCode: 85411000 Kapazitive Gesamtladung: 15nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C |
на замовлення 212 шт: термін постачання 21-31 дні (днів) |
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AIDK10S65C5ATMA1 | Виробник : Infineon Technologies |
Schottky Diodes & Rectifiers SIC_DISCRETE |
на замовлення 2022 шт: термін постачання 21-30 дні (днів) |
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| AIDK10S65C5ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; PG-TO263-2; 53W Technology: CoolSiC™ 5G; SiC Power dissipation: 53W Case: PG-TO263-2 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Max. forward voltage: 2.1V Load current: 10A Leakage current: 12µA Type of diode: Schottky rectifying Max. forward impulse current: 33A кількість в упаковці: 1000 шт |
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AIDK10S65C5ATMA1 | Виробник : Infineon Technologies |
Description: DISCRETE DIODES Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 303pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V Qualification: AEC-Q101 |
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AIDK10S65C5ATMA1 | Виробник : Infineon Technologies |
Description: DISCRETE DIODES Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 303pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V Qualification: AEC-Q101 |
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| AIDK10S65C5ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; PG-TO263-2; 53W Technology: CoolSiC™ 5G; SiC Power dissipation: 53W Case: PG-TO263-2 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Max. forward voltage: 2.1V Load current: 10A Leakage current: 12µA Type of diode: Schottky rectifying Max. forward impulse current: 33A |
товар відсутній |