AIDK10S65C5ATMA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 2+ | 248.33 грн |
| 10+ | 194.53 грн |
| 100+ | 156.47 грн |
| 500+ | 153.65 грн |
| 1000+ | 143.78 грн |
| 2000+ | 143.08 грн |
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Технічний опис AIDK10S65C5ATMA1 Infineon Technologies
Description: INFINEON - AIDK10S65C5ATMA1 - SiC-Schottky-Diode, CoolSiC 5G Series, Einfach, 650 V, 10 A, 15 nC, TO-263, tariffCode: 85411000, Bauform - Diode: TO-263, Kapazitive Gesamtladung: 15nC, rohsCompliant: YES, Diodenmontage: Oberflächenmontage, hazardous: false, rohsPhthalatesCompliant: YES, Diodenkonfiguration: Einfach, Qualifikation: AEC-Q101, isCanonical: N, usEccn: EAR99, Durchschnittlicher Durchlassstrom: 10A, euEccn: NLR, Anzahl der Pins: 2 Pins, Produktpalette: CoolSiC 5G Series, productTraceability: Yes-Date/Lot Code, Periodische Spitzensperrspannung: 650V, Betriebstemperatur, max.: 175°C, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції AIDK10S65C5ATMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
AIDK10S65C5ATMA1 | INFINEON |
 Description: INFINEON - AIDK10S65C5ATMA1 - SiC-Schottky-Diode, CoolSiC 5G Series, Einfach, 650 V, 10 A, 15 nC, TO-263tariffCode: 85411000 Bauform - Diode: TO-263 Kapazitive Gesamtladung: 15nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 isCanonical: N usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Anzahl der Pins: 2 Pins Produktpalette: CoolSiC 5G Series productTraceability: Yes-Date/Lot Code Periodische Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C SVHC: No SVHC (25-Jun-2025) |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
|
|
AIDK10S65C5ATMA1 | INFINEON |
Description: INFINEON - AIDK10S65C5ATMA1 - SiC-Schottky-Diode, CoolSiC 5G Series, Einfach, 650 V, 10 A, 15 nC, TO-263 tariffCode: 85411000 Bauform - Diode: TO-263 Kapazitive Gesamtladung: 15nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Anzahl der Pins: 2 Pins Produktpalette: CoolSiC 5G Series productTraceability: Yes-Date/Lot Code Periodische Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C SVHC: No SVHC (25-Jun-2025) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
AIDK10S65C5ATMA1 | Infineon Technologies |
Description: DISCRETE DIODES Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 303pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
|
|
AIDK10S65C5ATMA1 | Infineon Technologies |
Description: DISCRETE DIODES Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 303pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| AIDK10S65C5ATMA1 |
|
Виробник: INFINEON
Description: INFINEON - AIDK10S65C5ATMA1 - SiC-Schottky-Diode, CoolSiC 5G Series, Einfach, 650 V, 10 A, 15 nC, TO-263
tariffCode: 85411000
Bauform - Diode: TO-263
Kapazitive Gesamtladung: 15nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: AEC-Q101
isCanonical: N
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 10A
euEccn: NLR
Anzahl der Pins: 2 Pins
Produktpalette: CoolSiC 5G Series
productTraceability: Yes-Date/Lot Code
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - AIDK10S65C5ATMA1 - SiC-Schottky-Diode, CoolSiC 5G Series, Einfach, 650 V, 10 A, 15 nC, TO-263
tariffCode: 85411000
Bauform - Diode: TO-263
Kapazitive Gesamtladung: 15nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: AEC-Q101
isCanonical: N
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 10A
euEccn: NLR
Anzahl der Pins: 2 Pins
Produktpalette: CoolSiC 5G Series
productTraceability: Yes-Date/Lot Code
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| AIDK10S65C5ATMA1 |
|
Виробник: INFINEON
Description: INFINEON - AIDK10S65C5ATMA1 - SiC-Schottky-Diode, CoolSiC 5G Series, Einfach, 650 V, 10 A, 15 nC, TO-263
tariffCode: 85411000
Bauform - Diode: TO-263
Kapazitive Gesamtladung: 15nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 10A
euEccn: NLR
Anzahl der Pins: 2 Pins
Produktpalette: CoolSiC 5G Series
productTraceability: Yes-Date/Lot Code
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - AIDK10S65C5ATMA1 - SiC-Schottky-Diode, CoolSiC 5G Series, Einfach, 650 V, 10 A, 15 nC, TO-263
tariffCode: 85411000
Bauform - Diode: TO-263
Kapazitive Gesamtladung: 15nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 10A
euEccn: NLR
Anzahl der Pins: 2 Pins
Produktpalette: CoolSiC 5G Series
productTraceability: Yes-Date/Lot Code
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
товару немає в наявності
В кошику
од. на суму грн.
| AIDK10S65C5ATMA1 |
|
Виробник: Infineon Technologies
Description: DISCRETE DIODES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 303pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
Description: DISCRETE DIODES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 303pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| AIDK10S65C5ATMA1 |
|
Виробник: Infineon Technologies
Description: DISCRETE DIODES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 303pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
Description: DISCRETE DIODES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 303pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.