AIDW10S65C5XKSA1 Infineon Technologies
на замовлення 288 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 319.32 грн |
| 10+ | 283.36 грн |
| 25+ | 233.08 грн |
| 100+ | 201.78 грн |
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Технічний опис AIDW10S65C5XKSA1 Infineon Technologies
Description: DIODE SIL CARB 650V 10A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 303pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PG-TO247-3-41, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Qualification: AEC-Q100/101.
Інші пропозиції AIDW10S65C5XKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| AIDW10S65C5XKSA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; TO247-3 Technology: CoolSiC™ 5G; SiC Power dissipation: 65W Case: TO247-3 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 650V Application: automotive industry Load current: 10A Type of diode: Schottky rectifying Max. forward impulse current: 58A кількість в упаковці: 1 шт |
товар відсутній |
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AIDW10S65C5XKSA1 | Виробник : Infineon Technologies |
Description: DIODE SIL CARB 650V 10A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 303pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO247-3-41 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V Qualification: AEC-Q100/101 |
товар відсутній |
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| AIDW10S65C5XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; TO247-3 Technology: CoolSiC™ 5G; SiC Power dissipation: 65W Case: TO247-3 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 650V Application: automotive industry Load current: 10A Type of diode: Schottky rectifying Max. forward impulse current: 58A |
товар відсутній |