AIDW10S65C5XKSA1 Infineon Technologies
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 331.02 грн |
| 10+ | 293.74 грн |
| 25+ | 241.62 грн |
| 100+ | 209.17 грн |
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Технічний опис AIDW10S65C5XKSA1 Infineon Technologies
Description: DIODE SIL CARB 650V 10A TO247-3, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: PG-TO247-3-41, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 303pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Qualification: AEC-Q100/101.
Інші пропозиції AIDW10S65C5XKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AIDW10S65C5XKSA1 | Infineon Technologies |
 Description: DIODE SIL CARB 650V 10A TO247-3Current - Reverse Leakage @ Vr: 60 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO247-3-41 Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 303pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Qualification: AEC-Q100/101 |
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| AIDW10S65C5XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 10A TO247-3
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 303pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q100/101
Description: DIODE SIL CARB 650V 10A TO247-3
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 303pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q100/101
товару немає в наявності
В кошику
од. на суму грн.