Технічний опис AIDW16S65C5XKSA1 Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3, Qualification: AEC-Q100/101, Current - Reverse Leakage @ Vr: 90 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A, Voltage - DC Reverse (Vr) (Max): 650 V, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: PG-TO247-3-41, Current - Average Rectified (Io): 16A, Capacitance @ Vr, F: 471pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції AIDW16S65C5XKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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AIDW16S65C5XKSA1 | Infineon Technologies |
 Description: DIODE SIL CARB 650V 16A TO247-3Qualification: AEC-Q100/101 Current - Reverse Leakage @ Vr: 90 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Voltage - DC Reverse (Vr) (Max): 650 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO247-3-41 Current - Average Rectified (Io): 16A Capacitance @ Vr, F: 471pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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В кошику од. на суму грн. |
| AIDW16S65C5XKSA1 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3
Qualification: AEC-Q100/101
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 471pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE SIL CARB 650V 16A TO247-3
Qualification: AEC-Q100/101
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 471pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.