AIDW16S65C5XKSA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 467.63 грн |
| 10+ | 413.98 грн |
| 25+ | 340.60 грн |
| 100+ | 295.60 грн |
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Технічний опис AIDW16S65C5XKSA1 Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 471pF @ 1V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: PG-TO247-3-41, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A, Current - Reverse Leakage @ Vr: 90 µA @ 650 V, Qualification: AEC-Q100/101.
Інші пропозиції AIDW16S65C5XKSA1
| Фото | Назва | Виробник | Інформація |
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AIDW16S65C5XKSA1 | Виробник : Infineon Technologies |
 Description: DIODE SIL CARB 650V 16A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 471pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: PG-TO247-3-41 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Current - Reverse Leakage @ Vr: 90 µA @ 650 V Qualification: AEC-Q100/101 |
товару немає в наявності |
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| AIDW16S65C5XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 94W Max. forward voltage: 1.7V Load current: 16A Power dissipation: 94W Max. forward impulse current: 95A Max. off-state voltage: 650V Application: automotive industry Technology: CoolSiC™ 5G; SiC Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Case: TO247-3 |
товару немає в наявності |