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AIDW16S65C5XKSA1

AIDW16S65C5XKSA1 Infineon Technologies

Infineon-AIDW16S65C5-DS-v01_03-EN-1531829.pdf
Виробник: Infineon Technologies
Schottky Diodes & Rectifiers SIC_DISCRETE
на замовлення 210 шт:
термін постачання 21-30 дні (днів)
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Технічний опис AIDW16S65C5XKSA1 Infineon Technologies

Description: DIODE SIL CARB 650V 16A TO247-3, Qualification: AEC-Q100/101, Current - Reverse Leakage @ Vr: 90 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A, Voltage - DC Reverse (Vr) (Max): 650 V, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: PG-TO247-3-41, Current - Average Rectified (Io): 16A, Capacitance @ Vr, F: 471pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

Інші пропозиції AIDW16S65C5XKSA1

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
AIDW16S65C5XKSA1 AIDW16S65C5XKSA1 Infineon Technologies Infineon-AIDW16S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2d4eb5680 Description: DIODE SIL CARB 650V 16A TO247-3
Qualification: AEC-Q100/101
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 471pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
AIDW16S65C5XKSA1 INFINEON TECHNOLOGIES Infineon-AIDW16S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2d4eb5680 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 94W
Max. forward voltage: 1.7V
Load current: 16A
Power dissipation: 94W
Max. forward impulse current: 95A
Max. off-state voltage: 650V
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
AIDW16S65C5XKSA1 Infineon-AIDW16S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2d4eb5680
AIDW16S65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3
Qualification: AEC-Q100/101
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 471pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
AIDW16S65C5XKSA1 Infineon-AIDW16S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2d4eb5680
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 94W
Max. forward voltage: 1.7V
Load current: 16A
Power dissipation: 94W
Max. forward impulse current: 95A
Max. off-state voltage: 650V
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-3
товару немає в наявності
В кошику  од. на суму  грн.