AIGW40N65F5XKSA1 INFINEON
Виробник: INFINEONDescription: INFINEON - AIGW40N65F5XKSA1 - IGBT, 74 A, 1.6 V, 250 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.6V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pins
Produktpalette: TRENCHSTOP 5
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 74A
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 498.28 грн |
| 10+ | 378.75 грн |
| 100+ | 257.73 грн |
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Технічний опис AIGW40N65F5XKSA1 INFINEON
Description: IGBT 650V TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: PG-TO247-3-41, IGBT Type: Trench, Td (on/off) @ 25°C: 19ns/165ns, Switching Energy: 350µJ (on), 100µJ (off), Test Condition: 400V, 20A, 15Ohm, 15V, Gate Charge: 95 nC, Part Status: Active, Current - Collector (Ic) (Max): 74 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 250 W, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції AIGW40N65F5XKSA1
| Фото | Назва | Виробник | Інформація |
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AIGW40N65F5XKSA1 | Виробник : Infineon Technologies |
High Speed Fast IGBT Chip |
товар відсутній |
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AIGW40N65F5XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 95nC Kind of package: tube Manufacturer series: F5 Turn-on time: 30ns Turn-off time: 178ns кількість в упаковці: 1 шт |
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AIGW40N65F5XKSA1 | Виробник : Infineon Technologies |
Description: IGBT 650V TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Td (on/off) @ 25°C: 19ns/165ns Switching Energy: 350µJ (on), 100µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 250 W Grade: Automotive Qualification: AEC-Q101 |
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AIGW40N65F5XKSA1 | Виробник : Infineon Technologies |
IGBT Transistors DISCRETES |
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AIGW40N65F5XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 95nC Kind of package: tube Manufacturer series: F5 Turn-on time: 30ns Turn-off time: 178ns |
товар відсутній |