Технічний опис AIHD10N60RFATMA1 Infineon Technologies
Category: SMD IGBT transistors, Description: Transistor: IGBT; 600V; 10A; 150W; DPAK, Type of transistor: IGBT, Technology: TRENCHSTOP™, Collector-emitter voltage: 600V, Collector current: 10A, Power dissipation: 150W, Case: DPAK, Gate-emitter voltage: ±20V, Pulsed collector current: 30A, Mounting: SMD, Gate charge: 64nC, Kind of package: reel; tape, Turn-on time: 27ns, Turn-off time: 186ns, Features of semiconductor devices: reverse conducting IGBT (RC-IGBT), кількість в упаковці: 2500 шт.
Інші пропозиції AIHD10N60RFATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AIHD10N60RFATMA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Turn-on time: 27ns Turn-off time: 186ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) кількість в упаковці: 2500 шт |
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| AIHD10N60RFATMA1 | Виробник : Infineon Technologies |
Description: IC DISCRETE 600V TO252-3 |
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AIHD10N60RFATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Turn-on time: 27ns Turn-off time: 186ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
товар відсутній |