| Кількість | Ціна |
|---|---|
| 1+ | 541.89 грн |
| 10+ | 355.83 грн |
| 100+ | 262.20 грн |
| 1000+ | 238.23 грн |
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Технічний опис AIMBG120R080M1XTMA1 Infineon Technologies
Description: SICFET N-CH 1200V 30.6A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V, Power Dissipation (Max): 168W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 3.3mA, Supplier Device Package: PG-TO263-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V, Qualification: AEC-Q101.
Інші пропозиції AIMBG120R080M1XTMA1 за ціною від 304.52 грн до 588.35 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
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AIMBG120R080M1XTMA1 | Infineon Technologies |
 Description: SICFET N-CH 1200V 30.6A TO-263Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V Power Dissipation (Max): 168W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 3.3mA Supplier Device Package: PG-TO263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 836 шт: термін постачання 21-31 дні (днів) |
|
| AIMBG120R080M1XTMA1 |
|
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 30.6A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 30.6A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
на замовлення 836 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 588.35 грн |
| 10+ | 386.82 грн |
| 100+ | 304.52 грн |