на замовлення 100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 680.42 грн |
| 10+ | 574.45 грн |
| 25+ | 453.69 грн |
| 100+ | 416.49 грн |
| 250+ | 391.91 грн |
| 500+ | 367.33 грн |
| 1000+ | 330.8 грн |
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Технічний опис AIMBG120R160M1XTMA1 Infineon Technologies
Description: SIC_DISCRETE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V, Power Dissipation (Max): 106W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 1.6mA, Supplier Device Package: PG-TO263-7-12, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V, Qualification: AEC-Q101.
Інші пропозиції AIMBG120R160M1XTMA1
| Фото | Назва | Виробник | Інформація |
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AIMBG120R160M1XTMA1 | Виробник : Infineon Technologies |
 Description: SIC_DISCRETEPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 1.6mA Supplier Device Package: PG-TO263-7-12 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V Qualification: AEC-Q101 |
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AIMBG120R160M1XTMA1 | Виробник : Infineon Technologies |
Description: SIC_DISCRETE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 1.6mA Supplier Device Package: PG-TO263-7-12 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V Qualification: AEC-Q101 |
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