AIMBG75R020M1HXTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: AIMBG75R020M1HXTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 34.1A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2326 pF @ 500 V
Qualification: AEC-Q101
Description: AIMBG75R020M1HXTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 34.1A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2326 pF @ 500 V
Qualification: AEC-Q101
на замовлення 273 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1116.23 грн |
| 10+ | 876.46 грн |
| 100+ | 808.89 грн |
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Технічний опис AIMBG75R020M1HXTMA1 Infineon Technologies
Description: AIMBG75R020M1HXTMA1, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 81A (Tj), Rds On (Max) @ Id, Vgs: 18mOhm @ 34.1A, 20V, Power Dissipation (Max): 326W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 12.2mA, Supplier Device Package: PG-TO263-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2326 pF @ 500 V, Qualification: AEC-Q101.
Інші пропозиції AIMBG75R020M1HXTMA1 за ціною від 742.35 грн до 1346.95 грн
| Фото | Назва | Виробник | Інформація |
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Ціна | ||||||||||||||
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AIMBG75R020M1HXTMA1 | Виробник : Infineon Technologies |
 SiC MOSFETs AUTOMOTIVE_SICMOS |
на замовлення 425 шт: термін постачання 21-30 дні (днів) |
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AIMBG75R020M1HXTMA1 | Виробник : Infineon Technologies |
Description: AIMBG75R020M1HXTMA1 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tj) Rds On (Max) @ Id, Vgs: 18mOhm @ 34.1A, 20V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 12.2mA Supplier Device Package: PG-TO263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2326 pF @ 500 V Qualification: AEC-Q101 |
товару немає в наявності |