AIMBG75R027M1HXTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: SICFET N-CH 750V 64A TO-263
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Grade: Automotive
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Power Dissipation (Max): 273W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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Технічний опис AIMBG75R027M1HXTMA1 Infineon Technologies
Description: SICFET N-CH 750V 64A TO-263, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +23V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Grade: Automotive, Supplier Device Package: PG-TO263-7, Vgs(th) (Max) @ Id: 5.6V @ 8.8mA, Power Dissipation (Max): 273W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Інші пропозиції AIMBG75R027M1HXTMA1 за ціною від 592.70 грн до 946.06 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
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AIMBG75R027M1HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 750V 64A TO-263 Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Grade: Automotive Supplier Device Package: PG-TO263-7 Vgs(th) (Max) @ Id: 5.6V @ 8.8mA Power Dissipation (Max): 273W (Tc) |
на замовлення 1070 шт: термін постачання 21-31 дні (днів) |
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AIMBG75R027M1HXTMA1 | Infineon Technologies |
SiC MOSFETs AUTOMOTIVE_SICMOS |
на замовлення 271 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| AIMBG75R027M1HXTMA1 |
|
Виробник: Infineon Technologies
Description: SICFET N-CH 750V 64A TO-263
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Grade: Automotive
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Power Dissipation (Max): 273W (Tc)
Description: SICFET N-CH 750V 64A TO-263
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Grade: Automotive
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Power Dissipation (Max): 273W (Tc)
на замовлення 1070 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 946.06 грн |
| 10+ | 660.44 грн |
| 100+ | 592.70 грн |
| AIMBG75R027M1HXTMA1 |
|
Виробник: Infineon Technologies
SiC MOSFETs AUTOMOTIVE_SICMOS
SiC MOSFETs AUTOMOTIVE_SICMOS
на замовлення 271 шт:
термін постачання 21-30 дні (днів)