AIMCQ120R040M1TXTMA1 Infineon Technologies
на замовлення 436 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1070.27 грн |
| 10+ | 788.40 грн |
| 100+ | 592.84 грн |
| 500+ | 561.67 грн |
| 750+ | 476.55 грн |
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Технічний опис AIMCQ120R040M1TXTMA1 Infineon Technologies
Description: SIC_DISCRETE, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V, Power Dissipation (Max): 341W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 6.4mA, Supplier Device Package: PG-HDSOP-22, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V, Qualification: AEC-Q101.
Інші пропозиції AIMCQ120R040M1TXTMA1
| Фото | Назва | Виробник | Інформація |
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AIMCQ120R040M1TXTMA1 | Виробник : Infineon Technologies |
 Description: SIC_DISCRETEPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 6.4mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |
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AIMCQ120R040M1TXTMA1 | Виробник : Infineon Technologies |
Description: SIC_DISCRETE Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 6.4mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |