на замовлення 355 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 634.28 грн |
| 10+ | 531.31 грн |
| 100+ | 384.76 грн |
| 500+ | 339.88 грн |
| 750+ | 304.57 грн |
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Технічний опис AIMCQ120R120M1TXTMA1 Infineon Technologies
Description: SIC_DISCRETE, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V, Power Dissipation (Max): 161W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 2.2mA, Supplier Device Package: PG-HDSOP-22, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V, Qualification: AEC-Q101.
Інші пропозиції AIMCQ120R120M1TXTMA1 за ціною від 444.55 грн до 662.11 грн
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AIMCQ120R120M1TXTMA1 | Виробник : Infineon Technologies |
 Description: SIC_DISCRETEPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V Power Dissipation (Max): 161W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 2.2mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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AIMCQ120R120M1TXTMA1 | Виробник : Infineon Technologies |
Description: SIC_DISCRETE Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V Power Dissipation (Max): 161W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 2.2mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |