AIMDQ75R016M1HXUMA1 Infineon Technologies

Description: SICFET N-CH 750V PG-HDSOP-22, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +23V, -5V, Drive Voltage (Max Rds On, Min Rds On): 0V, 18V, Grade: Automotive, Supplier Device Package: PG-HDSOP-22, Vgs(th) (Max) @ Id: 5.6V @ 14.9mA, Power Dissipation (Max): 384W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V, Current - Continuous Drain (Id) @ 25°C: 98A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 22-PowerBSOP Module, Packaging: Tape & Reel (TR).