AIMDQ75R033M2HXTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: AIMDQ75R033M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.9mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 1+ | 806.84 грн |
| 10+ | 538.62 грн |
| 100+ | 425.82 грн |
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Технічний опис AIMDQ75R033M2HXTMA1 Infineon Technologies
Description: AIMDQ75R033M2HXTMA1, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V, Power Dissipation (Max): 217W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 5.9mA, Supplier Device Package: PG-HDSOP-22-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V, Qualification: AEC-Q101.
Інші пропозиції AIMDQ75R033M2HXTMA1 за ціною від 398.05 грн до 824.61 грн
| Фото | Назва | Виробник | Інформація |
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AIMDQ75R033M2HXTMA1 | Виробник : Infineon Technologies |
SiC MOSFETs CoolSiC Automotive Power Device 750 V G2 |
на замовлення 752 шт: термін постачання 21-30 дні (днів) |
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AIMDQ75R033M2HXTMA1 | Виробник : Infineon Technologies |
Description: AIMDQ75R033M2HXTMA1 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5.9mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V Qualification: AEC-Q101 |
товару немає в наявності |