AIMDQ75R090M1HXUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: AIMDQ75R090M1HXUMA1
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.6V @ 2.6mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 7.4A, 20V
Current - Continuous Drain (Id) @ 25°C: 24A (Tj)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
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Технічний опис AIMDQ75R090M1HXUMA1 Infineon Technologies
Description: AIMDQ75R090M1HXUMA1, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +23V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Grade: Automotive, Supplier Device Package: PG-HDSOP-22, Vgs(th) (Max) @ Id: 5.6V @ 2.6mA, Power Dissipation (Max): 128W (Tc), Rds On (Max) @ Id, Vgs: 83mOhm @ 7.4A, 20V, Current - Continuous Drain (Id) @ 25°C: 24A (Tj), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 22-PowerBSOP Module, Packaging: Tape & Reel (TR).
Інші пропозиції AIMDQ75R090M1HXUMA1 за ціною від 287.67 грн до 548.63 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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AIMDQ75R090M1HXUMA1 | Infineon Technologies |
Description: AIMDQ75R090M1HXUMA1 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Grade: Automotive Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 5.6V @ 2.6mA Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 7.4A, 20V Current - Continuous Drain (Id) @ 25°C: 24A (Tj) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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AIMDQ75R090M1HXUMA1 | Infineon Technologies |
 SiC MOSFETs AUTOMOTIVE_SICMOS |
на замовлення 726 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| AIMDQ75R090M1HXUMA1 |
Виробник: Infineon Technologies
Description: AIMDQ75R090M1HXUMA1
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.6V @ 2.6mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 7.4A, 20V
Current - Continuous Drain (Id) @ 25°C: 24A (Tj)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Description: AIMDQ75R090M1HXUMA1
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.6V @ 2.6mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 7.4A, 20V
Current - Continuous Drain (Id) @ 25°C: 24A (Tj)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 548.63 грн |
| 10+ | 394.37 грн |
| 25+ | 360.90 грн |
| 100+ | 304.14 грн |
| 250+ | 287.67 грн |
| AIMDQ75R090M1HXUMA1 |
|
Виробник: Infineon Technologies
SiC MOSFETs AUTOMOTIVE_SICMOS
SiC MOSFETs AUTOMOTIVE_SICMOS
на замовлення 726 шт:
термін постачання 21-30 дні (днів)