| Кількість | Ціна |
|---|---|
| 1+ | 2455.38 грн |
| 10+ | 1948.56 грн |
| 100+ | 1684.53 грн |
| 480+ | 1572.47 грн |
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Технічний опис AIMW120R035M1HXKSA1 Infineon Technologies
Description: 1200V COOLSIC MOSFET PG-TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 25A, 18V, Power Dissipation (Max): 228W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 10mA, Supplier Device Package: PG-TO247-3-41, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V, Qualification: AEC-Q101.
Інші пропозиції AIMW120R035M1HXKSA1 за ціною від 1651.48 грн до 2546.09 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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AIMW120R035M1HXKSA1 | Infineon Technologies |
 Description: 1200V COOLSIC MOSFET PG-TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 25A, 18V Power Dissipation (Max): 228W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 10mA Supplier Device Package: PG-TO247-3-41 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 254 шт: термін постачання 21-31 дні (днів) |
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| AIMW120R035M1HXKSA1 |
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Виробник: Infineon Technologies
Description: 1200V COOLSIC MOSFET PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 25A, 18V
Power Dissipation (Max): 228W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-3-41
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V
Qualification: AEC-Q101
Description: 1200V COOLSIC MOSFET PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 25A, 18V
Power Dissipation (Max): 228W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-3-41
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V
Qualification: AEC-Q101
на замовлення 254 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2546.09 грн |
| 30+ | 1651.48 грн |