AIMZH120R060M1TXKSA1 Infineon Technologies

Description: SIC_DISCRETE, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +23V, -5V, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Grade: Automotive, Supplier Device Package: PG-TO247-4-11, Vgs(th) (Max) @ Id: 5.1V @ 4.3mA, Power Dissipation (Max): 197W (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), FET Type: N-Channel.