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Технічний опис AIMZHN120R040M1TXKSA1 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 140A; 134W, Pulsed drain current: 140A, Power dissipation: 134W, Polarisation: unipolar, Technology: CoolSiC™; SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 39A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Application: automotive industry, Type of transistor: N-MOSFET, Gate-source voltage: -5...23V, Kind of package: tube, Case: TO247-4, On-state resistance: 80mΩ, Mounting: THT.
Інші пропозиції AIMZHN120R040M1TXKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| AIMZHN120R040M1TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 140A; 134W Pulsed drain current: 140A Power dissipation: 134W Polarisation: unipolar Technology: CoolSiC™; SiC Features of semiconductor devices: Kelvin terminal Drain current: 39A Kind of channel: enhancement Drain-source voltage: 1.2kV Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: -5...23V Kind of package: tube Case: TO247-4 On-state resistance: 80mΩ Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. |
| AIMZHN120R040M1TXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 140A; 134W
Pulsed drain current: 140A
Power dissipation: 134W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: -5...23V
Kind of package: tube
Case: TO247-4
On-state resistance: 80mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 140A; 134W
Pulsed drain current: 140A
Power dissipation: 134W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: -5...23V
Kind of package: tube
Case: TO247-4
On-state resistance: 80mΩ
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.