AMF12S62LB2ZXKMA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 1816.98 грн |
| 10+ | 1431.39 грн |
| 25+ | 1166.68 грн |
| 100+ | 1081.07 грн |
| 176+ | 1045.18 грн |
| 528+ | 1015.49 грн |
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Технічний опис AMF12S62LB2ZXKMA1 Infineon Technologies
Description: AMF12S62LB2ZXKMA1, Packaging: Tube, Package / Case: 32-PowerDIP Module (1.264", 32.10mm), Mounting Type: Through Hole, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C, Technology: Silicon Carbide (SiC), Power - Max: 125W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 800V, Rds On (Max) @ Id, Vgs: 88.3mOhm @ 11.3A, 18V, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 18V, Vgs(th) (Max) @ Id: 5.1V @ 3.6mA, Supplier Device Package: DIP 44x28DA, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції AMF12S62LB2ZXKMA1
| Фото | Назва | Виробник | Інформація | Доступність | _PRICE_WITHOUT_VAT |
|---|---|---|---|---|---|
| AMF12S62LB2ZXKMA1 | Infineon Technologies |
 Description: AMF12S62LB2ZXKMA1Packaging: Tube Package / Case: 32-PowerDIP Module (1.264", 32.10mm) Mounting Type: Through Hole Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C Technology: Silicon Carbide (SiC) Power - Max: 125W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 800V Rds On (Max) @ Id, Vgs: 88.3mOhm @ 11.3A, 18V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 18V Vgs(th) (Max) @ Id: 5.1V @ 3.6mA Supplier Device Package: DIP 44x28DA Grade: Automotive Qualification: AEC-Q101 |
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| AMF12S62LB2ZXKMA1 |
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Виробник: Infineon Technologies
Description: AMF12S62LB2ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 125W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 800V
Rds On (Max) @ Id, Vgs: 88.3mOhm @ 11.3A, 18V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 3.6mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
Description: AMF12S62LB2ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 125W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 800V
Rds On (Max) @ Id, Vgs: 88.3mOhm @ 11.3A, 18V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 3.6mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.