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Технічний опис AMR1K0V170E1 APC-E
Description: 1700V 1000MR, TO247-3L, INDUSTRI, Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 20 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): +27V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-247-3L, Vgs(th) (Max) @ Id: 4V @ 500µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 1000 V.
Інші пропозиції AMR1K0V170E1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
AMR1K0V170E1 | Luminus Devices Inc. |
 Description: 1700V 1000MR, TO247-3L, INDUSTRIGate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 20 V Drain to Source Voltage (Vdss): 1700 V Vgs (Max): +27V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Supplier Device Package: TO-247-3L Vgs(th) (Max) @ Id: 4V @ 500µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 1000 V |
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| AMR1K0V170E1 |
|
Виробник: Luminus Devices Inc.
Description: 1700V 1000MR, TO247-3L, INDUSTRI
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +27V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 1000 V
Description: 1700V 1000MR, TO247-3L, INDUSTRI
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +27V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.