AMR1K0V170E1 Luminus Devices Inc.
Виробник: Luminus Devices Inc.Description: 1700V 1000MR, TO247-3L, INDUSTRI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +27V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 1000 V
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Технічний опис AMR1K0V170E1 Luminus Devices Inc.
Description: 1700V 1000MR, TO247-3L, INDUSTRI, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: TO-247-3L, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +27V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 1000 V.