AO4310 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 36V 27A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 18 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 36 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.6W (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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Технічний опис AO4310 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 36V 27A 8SOIC, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 18 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Drain to Source Voltage (Vdss): 36 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 3.6W (Ta), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції AO4310
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AO4310 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 36V 27A 8SOIC Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 18 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Drain to Source Voltage (Vdss): 36 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.6W (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
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