AO4403 ALPHA & OMEGA SEMICONDUCTOR
на замовлення 2927 шт:
термін постачання 14-21 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 94.07 грн |
| 47+ | 24.10 грн |
| 129+ | 22.77 грн |
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Технічний опис AO4403 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET P-CH 30V 6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 15 V.
Інші пропозиції AO4403
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AO4403 | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET P-CH 30V 6A 8-Pin SOIC |
товару немає в наявності |
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AO4403 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 15 V |
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AO4403 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 6A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 15 V |
товару немає в наявності |