Технічний опис AO4425L AOSMD
Description: MOSFET P-CH 38V 14A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 20V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, 20V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 38 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V.
Інші пропозиції AO4425L
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AO4425L | Виробник : Alpha & Omega Semiconductor |
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AO4425L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 38V 14A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 20V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 38 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V |
товару немає в наявності |