Технічний опис AO4441L AOSMD
Description: MOSFET P-CH 60V 4A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.1W (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції AO4441L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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AO4441L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 60V 4A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |