Технічний опис AO4443 Alpha & Omega Semiconductor
Description: MOSFET P-CH 40V 6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 6A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 20 V.
Інші пропозиції AO4443
| Фото | Назва | Виробник | Інформація |
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AO4443 | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET P-CH 40V 6A 8-Pin SOIC T/R |
товару немає в наявності |
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AO4443 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 40V 6A 8-Pin SOIC T/R |
товару немає в наявності |
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AO4443 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 8.4nC Kind of channel: enhancement кількість в упаковці: 3000 шт |
товару немає в наявності |
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AO4443 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 40V 6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 20 V |
товару немає в наявності |
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AO4443 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 8.4nC Kind of channel: enhancement |
товару немає в наявності |