Технічний опис AO4444 AO
Description: MOSFET N-CH 80V 11A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 40 V.
Інші пропозиції AO4444
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| AO4444 | Виробник : AO |
 SO-8 |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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| AO4444 | Виробник : AOSMD |
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на замовлення 39000 шт: термін постачання 14-28 дні (днів) |
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AO4444 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 80V 11A 8-Pin SOIC T/R |
товар відсутній |
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AO4444 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 11A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 40 V |
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AO4444 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 11A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 40 V |
товар відсутній |