AO4576 - Транзисторы - Полевые N-канальные
Техническое описание AO4576
Цена AO4576 от 6.15 грн до 40.26 грн
AO4576 Производитель: Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 30V 20A 8SOIC Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.1W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 951pF @ 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) ![]() |
под заказ 15000 шт ![]() срок поставки 5-15 дня (дней) |
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AO4576 Производитель: Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 30V 20A 8SOIC Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 951pF @ 15V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) ![]() |
под заказ 16498 шт ![]() срок поставки 5-15 дня (дней) |
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AO4576 Производитель: ALPHA & OMEGA SEMICONDUCTOR Material: AO4576 SMD N channel transistors ![]() |
под заказ 473 шт ![]() срок поставки 7-14 дня (дней) |
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AO4576 Производитель: Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 30V 20A 8SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 951pF @ 15V Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide ![]() |
под заказ 7520 шт ![]() срок поставки 5-15 дня (дней) |
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