Технічний опис AO4612L AOSMD
Description: MOSFET N/P-CH 60V 4.5A 8SOIC, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 20nC @ 10V, Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V, 105mOhm @ 3.2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V, 1120pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.2A (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції AO4612L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
AO4612L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 60V 4.5A 8SOICPart Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 20nC @ 10V Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V, 105mOhm @ 3.2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V, 1120pF @ 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.2A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |

