Технічний опис AO4613 AOSMD
Description: MOSFET N/P-CH 30V 8SOIC, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7.2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V, Drain to Source Voltage (Vdss): 30V.
Інші пропозиції AO4613
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AO4613 | Виробник : Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N/P-CH 30V 8SOICPower - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 7.2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Drain to Source Voltage (Vdss): 30V |
товару немає в наявності |