AO4627 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 4.5A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
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Технічний опис AO4627 Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 4.5A 8SOIC, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide).