AO4818B

AO4818B Alpha & Omega Semiconductor


ao4818b.pdf Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 8A 8-Pin SOIC
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Технічний опис AO4818B Alpha & Omega Semiconductor

Description: MOSFET 2N-CH 30V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V, Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.

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AO4818B AO4818B Виробник : Alpha & Omega Semiconductor ao4818b.pdf Trans MOSFET N-CH 30V 8A 8-Pin SOIC
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AO4818B AO4818B Виробник : Alpha & Omega Semiconductor Inc. AO4818B.pdf Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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AO4818B AO4818B Виробник : Alpha & Omega Semiconductor Inc. AO4818B.pdf Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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AO4818B AO4818B Виробник : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A3F34AB7B0C72A50&compId=AO4818B-DTE.pdf?ci_sign=46b8db3c0b1dbc25f82e2c79438ba38fceafce65 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.6A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.6A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
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