AO4862E Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис AO4862E Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 4.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V, Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC.
Інші пропозиції AO4862E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
AO4862E | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; 1.1W; SO8; ESD Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: N-MOSFET x2 Case: SO8 Polarisation: unipolar Gate charge: 2nC On-state resistance: 46mΩ Power dissipation: 1.1W Drain current: 3.5A Gate-source voltage: ±20V Drain-source voltage: 30V |
товару немає в наявності |