Технічний опис AO6401 AO
Description: MOSFET P-CH 30V 5A 6TSOP, Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 47mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції AO6401
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AO6401 | Виробник : Alpha & Omega Semiconductor Inc. |
 Description: MOSFET P-CH 30V 5A 6TSOPMounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
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