Технічний опис AO8818 AO
Description: MOSFET 2N-CH 30V 8TSSOP, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V, Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.5W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate.
Інші пропозиції AO8818
| Фото | Назва | Виробник | Інформація |
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AO8818 | Виробник : Alpha & Omega Semiconductor Inc. |
 Description: MOSFET 2N-CH 30V 8TSSOPGate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V Drain to Source Voltage (Vdss): 30V Power - Max: 1.5W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate |
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