Технічний опис AOB15B60D Alpha & Omega Semiconductor
Description: IGBT 600V 30A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 196 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 21ns/73ns, Switching Energy: 420µJ (on), 110µJ (off), Test Condition: 400V, 15A, 20Ohm, 15V, Gate Charge: 25.4 nC, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 167 W.
Інші пропозиції AOB15B60D
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOB15B60D | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 15A; 83.3W; TO263 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 83.3W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 25.4nC Kind of package: reel; tape кількість в упаковці: 800 шт |
товару немає в наявності |
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AOB15B60D | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 30A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 196 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 21ns/73ns Switching Energy: 420µJ (on), 110µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 25.4 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 167 W |
товару немає в наявності |
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| AOB15B60D | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 15A; 83.3W; TO263 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 83.3W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 25.4nC Kind of package: reel; tape |
товару немає в наявності |