AOB288L Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 10.5A/46A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 93.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Технічний опис AOB288L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 10.5A/46A TO263, Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 93.5W (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 46A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).