AOB2910L Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 100V 6A TO263
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc)
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Технічний опис AOB2910L Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 100V 6A TO263, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 23.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc).
Інші пропозиції AOB2910L
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AOB2910L | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 25W; TO263 Power dissipation: 25W Gate charge: 7nC Polarisation: unipolar Drain current: 21A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO263 On-state resistance: 23.5mΩ Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| AOB2910L |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 25W; TO263
Power dissipation: 25W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263
On-state resistance: 23.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 25W; TO263
Power dissipation: 25W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263
On-state resistance: 23.5mΩ
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.