AOB414 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 75W; TO263
Mounting: SMD
Drain-source voltage: 100V
Drain current: 36A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Gate charge: 28nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO263
кількість в упаковці: 1 шт
на замовлення 241 шт:
термін постачання 14-21 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 75.44 грн |
| 10+ | 64.28 грн |
| 20+ | 55.73 грн |
| 54+ | 52.69 грн |
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Технічний опис AOB414 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 100V 6.6A/51A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 51A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V.
Інші пропозиції AOB414 за ціною від 43.91 грн до 104.25 грн
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AOB414 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 75W; TO263 Mounting: SMD Drain-source voltage: 100V Drain current: 36A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Gate charge: 28nC Kind of channel: enhancement Gate-source voltage: ±25V Case: TO263 |
на замовлення 241 шт: термін постачання 21-30 дні (днів) |
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AOB414 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 6.6A/51A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
на замовлення 310 шт: термін постачання 21-31 дні (днів) |
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AOB414 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 6.6A/51A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
товару немає в наявності |