AOB66914L Alpha & Omega Semiconductor Inc.
                                                Виробник: Alpha & Omega Semiconductor Inc.Description: N
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 6V
Power Dissipation (Max): 10W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
на замовлення 798 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна | 
|---|---|
| 1+ | 578.54 грн | 
| 10+ | 378.63 грн | 
| 100+ | 291.98 грн | 
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Технічний опис AOB66914L Alpha & Omega Semiconductor Inc.
Description: N, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 6V, Power Dissipation (Max): 10W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V. 
Інші пропозиції AOB66914L
| Фото | Назва | Виробник | Інформація | 
            Доступність             | 
        Ціна | 
|---|---|---|---|---|---|
| AOB66914L | Виробник : Alpha & Omega Semiconductor | 
            
                         N Channel Trench Power MOSFET         | 
        
                             товару немає в наявності                      | 
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        AOB66914L | Виробник : Alpha & Omega Semiconductor Inc. | 
            
                         Description: NPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 6V Power Dissipation (Max): 10W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V  | 
        
                             товару немає в наявності                      | 
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| AOB66914L | Виробник : ALPHA & OMEGA SEMICONDUCTOR | 
            
                         Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 185W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Kind of channel: enhancement Technology: AlphaSGT™  | 
        
                             товару немає в наявності                      |