AOC2403 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 1.8A 4ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
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Технічний опис AOC2403 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 1.8A 4ALPHADFN, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V, Power Dissipation (Max): 450mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 4-AlphaDFN (0.97x0.97), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V.
Інші пропозиції AOC2403
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AOC2403 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 1.8A 4ALPHADFN Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V Power Dissipation (Max): 450mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 4-AlphaDFN (0.97x0.97) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
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