AOC2806 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
Description: MOSFET 2N-CH 20V 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
на замовлення 391 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
8+ | 40.44 грн |
10+ | 33.87 грн |
100+ | 23.42 грн |
Відгуки про товар
Написати відгук
Технічний опис AOC2806 Alpha & Omega Semiconductor Inc.
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4, Mounting: SMD, Drain-source voltage: 20V, Drain current: 4.5A, On-state resistance: 18mΩ, Type of transistor: N-MOSFET x2, Power dissipation: 0.7W, Polarisation: unipolar, Gate charge: 12.5nC, Kind of channel: enhanced, Gate-source voltage: ±12V, Case: DFN4, кількість в упаковці: 1 шт.
Інші пропозиції AOC2806
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
AOC2806 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4 Mounting: SMD Drain-source voltage: 20V Drain current: 4.5A On-state resistance: 18mΩ Type of transistor: N-MOSFET x2 Power dissipation: 0.7W Polarisation: unipolar Gate charge: 12.5nC Kind of channel: enhanced Gate-source voltage: ±12V Case: DFN4 кількість в упаковці: 1 шт |
товар відсутній |
||
AOC2806 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V Supplier Device Package: 4-DFN (1.7x1.7) |
товар відсутній |
||
AOC2806 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4 Mounting: SMD Drain-source voltage: 20V Drain current: 4.5A On-state resistance: 18mΩ Type of transistor: N-MOSFET x2 Power dissipation: 0.7W Polarisation: unipolar Gate charge: 12.5nC Kind of channel: enhanced Gate-source voltage: ±12V Case: DFN4 |
товар відсутній |