AOCA32112E Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4.5A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Part Status: Active
Description: MOSFET 2N-CH 20V 4.5A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Part Status: Active
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Технічний опис AOCA32112E Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4.5A 4DFN, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 4-AlphaDFN (0.97x0.97), Part Status: Active.
Інші пропозиції AOCA32112E
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AOCA32112E | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 4.5A 4DFN Packaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 4-AlphaDFN (0.97x0.97) Part Status: Active |
товару немає в наявності |