AOD2610E Alpha & Omega Semiconductor
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 11.8 грн |
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Технічний опис AOD2610E Alpha & Omega Semiconductor
Description: MOSFET N-CH 60V 46A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V.
Інші пропозиції AOD2610E за ціною від 14.64 грн до 29.58 грн
| Фото | Назва | Виробник | Інформація |
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AOD2610E | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO252 Mounting: SMD Case: TO252 Power dissipation: 23.5W Drain-source voltage: 60V Drain current: 36.5A On-state resistance: 9.5mΩ Type of transistor: N-MOSFET Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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AOD2610E | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO252 Mounting: SMD Case: TO252 Power dissipation: 23.5W Drain-source voltage: 60V Drain current: 36.5A On-state resistance: 9.5mΩ Type of transistor: N-MOSFET Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
на замовлення 2000 шт: термін постачання 7-14 дні (днів) |
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AOD2610E | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 46A 3-Pin(2+Tab) DPAK T/R |
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AOD2610E | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 46A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Part Status: Active Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
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AOD2610E | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 46A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Part Status: Active Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
товар відсутній |